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BUS50 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUS50
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUS50 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
1
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUS50
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 125V(Min.)
·
High Switching Speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low voltage ,high speed,power switching in
Inductive circuits where fall time is critical.It is particularly
suited for battery switch mode application such as switching
regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
70
A
IB
Base Current
20
A
PC
Collector Power Dissipation
@TC=25℃
350
W
Tj
Junction Temperature
-65~200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.5
℃
/W


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