| Datenblatt-Suchmaschine für elektronische Bauteile |
|
IXFN38N100P Datenblatt(PDF) 4 Page - IXYS Corporation |
|
|
|||||||||||||||||||||||||||||
IXFN38N100P Datenblatt(HTML) 4 Page - IXYS Corporation |
|
4 / 6 page ![]() IXFN38N100P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 10 20 30 40 50 60 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 VGS - Volts TJ = 125 oC 25 oC - 40 oC Fig. 8. Transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 1020 3040 50 60 7080 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 20 40 60 80 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 QG - NanoCoulombs VDS = 500V I D = 19A I G = 10mA Fig. 11. Capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 0.1 1 10 100 1000 10 100 1,000 VDS - Volts TJ = 150 oC TC = 25 oC Single Pulse 1ms 100μs RDS(on) Limit 10ms DC 100ms 25μs |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |