| Datenblatt-Suchmaschine für elektronische Bauteile |
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IXFN300N10P Datenblatt(PDF) 4 Page - IXYS Corporation |
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IXFN300N10P Datenblatt(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN300N10P IXYS REF: F_300N10P(9S) 7-22-08 Fig. . Transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 200 ID - Amperes TJ = - 40ºC 150ºC 25ºC Fig. 8. Forward Voltage Drop of Intrinsic Diode 0 50 100 150 200 250 300 350 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts TJ = 150ºC TJ = 25ºC Fig. 9. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 QG - NanoCoulombs VDS = 50V I D = 150A I G = 10mA Fig. 10. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 11. Forward-Bias Safe Operating Area 0 1 10 100 1,000 1 10 100 1000 VDS - Volts TJ = 175ºC TC = 25ºC Single Pulse 100µs 10ms 1ms RDS(on) Limit 100ms DC External Lead Limit |
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