IXTP05N100P datasheet(1/7 Pages) IXYS

Teilenummer	IXTP05N100P

Bauteilbeschribung	Fast Intrinsic Diode

PDF	7 Pages

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Hersteller	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS100272B(6/18)

V

DSS

= 1000V

I

D25

= 0.5A

R

DS(on)

 30



N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1000

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1000

V

GSS

Continuous

 20

V

GSM

Transient

 30

V

I

D25

T

C = 25C

0.5

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

1.25

A

I

A

T

C = 25C

0.5

A

E

AS

T

C = 25C50

mJ

dv/dt

I

S

 I

DM, VDD  VDSS,TJ  150C

10

V/ns

P

D

T

C = 25C50

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb

M

d

Mounting Torque ( TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-263

2.5

g

TO-220

3.0

g

IXTA05N100P

IXTP05N100P

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 50μA

2.0

4.0

V

I

GSS

V

GS =  20V, VDS = 0V

 50

nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

750

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

24

30



PolarTM

Power MOSFET

Features

 International Standard Packages

 Avalanche Rated

 Fast Intrinsic Diode

 Dynamic dv/dt Rated

 Low Package Inductance

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 Switch-Mode and Resonant-Mode

Power Supplies

 DC-DC Converters

 Laser Drivers

 AC and DC Motor Drives

 Robotics and Servo Controls

G = Gate

D

= Drain

S = Source

Tab = Drain

G

S

D (Tab)

TO-220 (IXTP)

TO-263 (IXTA)

D (Tab)

S

G

D

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