HMS4438 datasheet(2/7 Pages) HMSEMI

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Page

V1.0

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.1

1.7

2.5

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=10A

mΩ

VGS=4.5V, ID=18A

mΩ

Forward Transconductance

gFS

VDS=5V,ID=10A

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=30V,VGS=0V,

F=1.0MHz

4000

Output Capacitance

Coss

680

Reverse Transfer Capacitance

Crss

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=30V, RL=1.7Ω

VGS=10V,RG=3Ω

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Total Gate Charge

VDS=30V,ID=10A,

VGS=10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

8.5

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=10A

1.2

Diode Forward Current (Note 2)

Reverse Recovery Time

trr

TJ = 25°C, IF = IS

di/dt = 100A/μs(Note3)

Reverse Recovery Charge

Qrr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω

HMS4438

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