STTH16L06C datasheet(3/8 Pages) STMICROELECTRONICS

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STTH16L06C

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Figure 1: Conduction losses versus average

forward current (per diode)

Figure 2: Forward voltage drop versus forward

current (per diode)

Figure

Relative

variation

thermal

impedance junction to case versus pulse

duration (TO-220AB & D2PAK)

Figure

Relative

variation

thermal

impedance junction to case versus pulse

duration (TO-220FPAB)

Figure 5: Peak reverse recovery current versus

dIF/dt (typical values, per diode)

Figure 6: Reverse recovery time versus dIF/dt

(typical values, per diode)

024

P(W)

δ=tp/T

δ = 0.05

δ = 1

(A)

F(AV)

δ = 0.1 δ = 0.2

δ = 0.5

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

(A)

T =150°C

(typical values)

T =25°C

(maximum values)

T =150°C

(maximum values)

(V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

100

150

200

250

300

350

400

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

I =2 x I

F(AV)

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