STGD7NC60H datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

STGP7NC60H - STGD7NC60H

2/12

Table 3: Absolute Maximum ratings

( ) Pulse width limited by max. junction temperature.

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Main Parameters

(#) Calculated according to the iterative formula:

Symbol

Parameter

Value

Unit

TO-220

DPAK

VCES

Collector-Emitter Voltage (VGS = 0)

600

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC = 25°C (#)

Collector Current (continuous) at TC = 100°C (#)

ICM ( )

Collector Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.64

0.56

W/°C

Tstg

Storage Temperature

– 55 to 150

°C

Operating Junction Temperature

Min.

Typ.

Max.

Rthj-case

Thermal Resistance Junction-case

TO-220

1.56

°C/W

DPAK

1.78

Rthj-amb

Thermal Resistance Junction-ambient

TO-220

62.5

°C/W

DPAK

100

Maximum Lead Temperature for Soldering

Purpose (1.6 mm from case, for 10 sec.)

TO-220

300

°C

DPAK

275

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter

Breakdown Voltage

IC = 1 mA, VGE = 0

600

ICES

Collector cut-off Current

(VGE = 0)

VCE = Max Rating, TC= 25 °C

VCE = Max Rating, TC= 125 °C

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20V , VCE = 0

±100

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250 µA

3.75

5.75

VCE(sat)

Collector-Emitter

Saturation Voltage

VGE = 15V, IC = 7 A

VGE = 15V, IC = 7 A, Tc= 125°C

1.85

1.7

2.5

()

JMAX

–

THJ

–

CE SAT M AX

() TC IC

()

--------------------------------------------------------------------------------------------------

STGD7NC60H Datenblatt(PDF) 2 Page - STMicroelectronics

STGD7NC60H Datenblatt(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL