Approval Sheet

Page 2 of 8

ASC_RFASWB646BTF09_V02

Mar. 2018

FEATURES



Low Insertion Loss

：0.7dB typ. @ 3.8GHz



High Isolation

：30dB typ. @ 3.8GHz



Low control voltage

：1.3 to 2.7 V



High ESD tolerance of 1kV HBM at all pins

：



Miniature footprint



Moisture Sensitive Level 3 (MSL3)

：

Description



The RFASWB646BTF09 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch with an integrated General

Purpose Input Output (GPIO) control. The RFASWB646BTF09 maintains low insertion and high isolation, which makes it an

idea choice for Multi-Mode, GSM, EDGE, UMTS, and TLE handset applications.



The RFASWB646BTF09 is ideally suited for applications where high linearity, high isolation, low insertion loss, low current

consumption, and small size are required.



No blocking capacitor requirement on the RF paths ad long as no DC voltage is applied. The RFASWB646BTF09 is

Application



Multi-mode 3G/4G, LTE TRx system.

Block Diagram and Pin Out (Top View)

RF3

RF1

RF2

VDD

Bias

Decoder

RF4

Pin Names and Descriptions

Pin

Name

Description

Pin

Name

Description

1

GND

Ground

7

GND

Ground

2

VDD

DC power supply

8

RF2

RF path 2

3

GND

Ground

9

GND

Ground

4

Control voltage 1

10

RF3

RF path 3

5

GND

Ground

11

GND

Ground

6

RF4

RF path 4

12

RF1

RF path 1

1

2

3

4

5

6

7

8

9

10

11

12

GND