| Datenblatt-Suchmaschine für elektronische Bauteile |
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EMD12 Datenblatt(PDF) 1 Page - First Silicon Co., Ltd |
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EMD12 Datenblatt(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() SEMICONDUCTOR TECHNICAL DATA EMD12 2015. 08. 30 1/5 Revision No : 0 SOT-563 Dual NPN+PNP Digital transistors (built-in resistors) FEATURES Two DTC704(NPN)+DTA804(PNP) chip in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area be cut in half Marking: D12 Equivalent circuit 1 TR1 Absolute maximum ratings (Ta=25 ℃) t i n U s t i m i L l o b m y S r e t e m a r a P Supply voltage VCC V 0 5 Input voltage VIN V 0 4 ~ 0 1 - IO 0 0 1 Output current IC(MAX) 0 0 1 mA Power dissipation W m 0 5 1 d P Junction temperature 0 5 1 j T ℃ Storage temperature 0 5 1 ~ 5 5 - g t s T ℃ TR1 Electrical characteristics (Ta=25 ℃) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.5 VCC=5V, IO=100 μA Input voltage VI(on) 3 V VO=0.3V, IO=2mA Output voltage VO(on) 0.1 0.3 V IO/II=10mA/0.5mA Input current II 0.18 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 68 VO=5V, IO=5mA Input resistance R1 32.9 47 61.1 K Ω - Resistance ratio R2/R1 0.8 1 1.2 - Transition frequency fT 250 MHz VCE=10V, IE=5mA, f=100MHz |
Ähnliche Teilenummer - EMD12 |
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Ähnliche Beschreibung - EMD12 |
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