FMMT491 datasheet(1/3 Pages) FS

Teilenummer	FMMT491

Bauteilbeschribung	TRANSISTOR (NPN)

PDF	3 Pages

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Hersteller	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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COLLECTOR

3

1

BASE

2

EMITTER

SEMICONDUCTOR

TECHNICAL DATA

FMMT491

2015.02. 06

1/3

Revision No : 0

SOT–23

1

3

2

FMMT491

TRANSISTOR (NPN)

FEATURES

Low equivalent on-resistance

Marking :491

ICM

Peak Pulse Current

2

A

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

1

A

PC

Collector Power Dissipation

250

mW

RΘJA

Thermal Resistance From Junction To Ambient

500

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100

μA,IE

0

8

0

=

V

Collector-emitter breakdown voltage

V(BR)CEO

1

IC=10mA,IB

0

6

0

=

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100

μA,IC

5

0

=

V

Collector cut-off current

ICBO

VCB=60V,IE 0

=

0.1

μA

Emitter cut-off current

IEBO

VEB=4V,IC 0

=

0.1

μA

hFE(1)

VCE=5V,IC=1mA

100

hFE(2)

1

VCE=5V,IC=500mA

100

300

hFE(3)

1

VCE=5V,IC=1A

80

DC current gain

hFE(4)

1

VCE=5V,IC=2A

30

VCE(sat)1

1

IC=500mA,IB=50mA

0.25

V

Collector-emitter saturation voltage

VCE(sat)2

1

IC=1A,IB

A

m

0

1

=

0.5

V

Base-emitter saturation voltage

VBE(sat)

1

IC=1A,IB

A

m

0

1

=

1.1

V

Base-emitter voltage

VBE

1

VCE=5V,IC

A

1

=

1

V

Transition frequency

fT

VCE=10V,IC=50mA,,f=100MHz

150

MHz

Collector output capacitance

Cob

VCB

z

H

M

1

=

f

,

V

0

1

=

10

pF

1Measured under pulsed conditions, Pulse width=300

μs, Duty cycle≤2%.

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