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STTH20002TV1 Datenblatt(PDF) 1 Page - STMicroelectronics |
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STTH20002TV1 Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() ® 1/5 MAIN PRODUCT CHARACTERISTICS IF(AV) Up to 2 x 120 A VRRM 200 V Tj 150°C VF (typ) 0.75 V trr (typ) 41 ns STTH20002TV TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward voltage 170 A IF(AV) Average forward current δ = 0.5 Tc = 95°C Per diode 100 A Tc = 80°C Per diode 120 IFSM Surge non repetitive forward current tp = 10ms sinusoidal 1000 A Tstg Storage temperature range -55 to + 150 °C Tj Maximum operating junction temperature 150 °C K1 K2 A2 A1 ISOTOP STTH20002TV1 A1 K1 A2 K2 July 2004 REV. 2 FEATURES AND BENEFITS ■ Suited for SMPS ■ Very Low Forward Losses ■ Low recovery time ■ High surge current capability ■ Insulated: Insulating voltage=2500VRMS Capacitance = 55pF DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications. Order Codes Part Number Marking STTH20002TV1 STTH20002TV1 |
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