2SC4501L datasheet(2/5 Pages) HITACHI

2 / 5 page

2SC4501(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

Collector peak current

C (peak)

Collector power dissipation

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 0.1 mA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = _

Emitter to base breakdown

voltage

(BR)EBO

7—

—

E = 0.1 mA, IC = 0

Collector cutoff current

CEO

——20

µA

CB = 24 V, RBE = _

DC current transfer ratio

2000

—

50000

CE = 3 V, IC = 1.5 A*

Collector to emitter saturation

voltage

CE (sat)

—

1.5

C = 1.5 A, IB = 3 mA*

CE (sat)

—

2.0

C = 3 A, IB = 30 mA*

Base to emitter saturation

voltage

BE (sat)

—

2.0

C = 1.5 A, IB = 3 mA*

BE (sat)

—

3.5

C = 3 A, IB = 30 mA*

Turn on time

—

0.4

—

µs

C = 1.5 A,

Turn off time

off

—

1.2

—

µs

B1 = –IB2 = 3 mA,

Storage time

stg

—

0.8

—

µs

CC = 30 V

Note:

1. Pulse test.

2SC4501L Datenblatt(PDF) 2 Page - Hitachi Semiconductor

2SC4501L Datenblatt(HTML) 2 Page - Hitachi Semiconductor

Html Pages

1 2 3 4 5

Datenblatt Download

Link URL