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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS3607PBF Datenblatt(PDF) 2 Page - Thinki Semiconductor Co., Ltd. |
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IRFS3607PBF Datenblatt(HTML) 2 Page - Thinki Semiconductor Co., Ltd. |
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2 / 7 page  Table 2. Thermal Characteristic Symbol Parameter Value Unit RJC Thermal Resistance,Junction-to-Case 1.08 ℃/W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 75 V IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=82V,VGS=0V 1 μA IDSS Zero Gate Voltage Drain Current(Tc=125℃) VDS=82V,VGS=0V 10 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2 4 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=40A 6.2 7.45 mΩ Dynamic Characteristics gFS Forward Transconductance VDS=10V,ID=15A 20 S Ciss Input Capacitance 5053 PF Coss Output Capacitance 442 PF Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, f=1.0MHz 145 PF Qg Total Gate Charge 106 nC Qgs Gate-Source Charge 19 nC Qgd Gate-Drain Charge VDS=50V,ID=40A, VGS=10V 47.9 nC Switching Times td(on) Turn-on Delay Time 15 nS tr Turn-on Rise Time 18 nS td(off) Turn-Off Delay Time 31 nS tf Turn-Off Fall Time VDD=30V,ID=40A,RL=15Ω VGS=10V,RG=2.5Ω 38 nS Source-Drain Diode Characteristics ISD Source-drain Current(Body Diode) 92 A ISDM Pulsed Source-Drain Current(Body Diode) 368 A VSD Forward On Voltage (Note 1) TJ=25℃,ISD=40A,VGS=0V 0.78 0.95 V trr Reverse Recovery Time (Note 1) 56 nS Qrr Reverse Recovery Charge (Note 1) TJ=25℃,IF=75A di/dt=100A/μs 113 nC ton Forward Turn-on Time Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃ 85 IRFB3607PbF/IRFS3607PbF/IRFSL3607PbF © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/7 Rev.10T |
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