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BGA3012 Datenblatt(PDF) 4 Page - NXP Semiconductors

Teilenummer BGA3012
Bauteilbeschribung  1 GHz 12 dB gain wideband amplifier MMIC
PDF  15 Pages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BGA3012 Datenblatt(HTML) 4 Page - NXP Semiconductors

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BGA3012
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2013
4 of 15
NXP Semiconductors
BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
[1]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2
 f
2  f1, where f2 =f1  6 MHz. Input power Pi = 20 dBm.
[2]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is
f
2  f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
[3]
Measured with 132 NTSC channels VO = 30 dBmV.
Table 8.
Characteristics at VCC = 5 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 5 V; ZS =ZL =75 ;
R1 = 100
; R2 = 300 .
Symbol Parameter
Conditions
Min
Typ Max Unit
VCC
supply voltage
RF input AC coupled
4.75 5
5.25 V
ICC(tot)
total supply current
-
70
85
mA
s
21
2
insertion power gain
-
12
-
dB
SLsl
slope straight line
-
0.5
-
dB
FL
flatness of frequency response
-
0.5
-
dB
NF
noise figure
f = 50 MHz
-
2.9
-
dB
f = 500 MHz
-
2.9
-
dB
f = 1000 MHz
-
3.2
-
dB
RLin
input return loss
f = 50 MHz
-
22
-
dB
f = 500 MHz
-
25
-
dB
f = 1000 MHz
-
25
-
dB
RLout
output return loss
f = 50 MHz
-
22
-
dB
f = 500 MHz
-
22
-
dB
f = 1000 MHz
-
12
-
dB
PL(1dB)
output power at 1 dB
gain compression
-18
-dBm
IP3O
output third-order intercept point
[1] -36
-dBm
IP2O
output second-order intercept point
[2] -54
-dBm
CTB
composite triple beat
[3] -
70 -
dBc
CSO
composite second-order distortion
[3] -
54 -
dBc



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