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BGA3012 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BGA3012 Datenblatt(HTML) 4 Page - NXP Semiconductors |
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4 / 15 page ![]() BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 26 September 2013 4 of 15 NXP Semiconductors BGA3012 1 GHz 12 dB gain wideband amplifier MMIC [1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f 2 f1, where f2 =f1 6 MHz. Input power Pi = 20 dBm. [2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f 2 f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm. [3] Measured with 132 NTSC channels VO = 30 dBmV. Table 8. Characteristics at VCC = 5 V Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 5 V; ZS =ZL =75 ; R1 = 100 ; R2 = 300 . Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage RF input AC coupled 4.75 5 5.25 V ICC(tot) total supply current - 70 85 mA s 21 2 insertion power gain - 12 - dB SLsl slope straight line - 0.5 - dB FL flatness of frequency response - 0.5 - dB NF noise figure f = 50 MHz - 2.9 - dB f = 500 MHz - 2.9 - dB f = 1000 MHz - 3.2 - dB RLin input return loss f = 50 MHz - 22 - dB f = 500 MHz - 25 - dB f = 1000 MHz - 25 - dB RLout output return loss f = 50 MHz - 22 - dB f = 500 MHz - 22 - dB f = 1000 MHz - 12 - dB PL(1dB) output power at 1 dB gain compression -18 -dBm IP3O output third-order intercept point [1] -36 -dBm IP2O output second-order intercept point [2] -54 -dBm CTB composite triple beat [3] - 70 - dBc CSO composite second-order distortion [3] - 54 - dBc |
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