20N50D datasheet(1/10 Pages) WXDH

Teilenummer	20N50D

Bauteilbeschribung	20A 500V N-channel Enhancement Mode Power MOSFET

PDF	10 Pages

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Hersteller	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

Direct Link	http://www.jswxdh.cn

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Jiangsu Donghai Semiconductor Technology CO.,LTD.

Rev. 1.0

Page 1 of 10

20N50D/20N50B

20A 500V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

Parameter

Symbol

Rating

Units

Drian-to-Source Voltage

VDSS

500

V

Gate-to-Source Voltage

VGSS

±30

V

Continuous Drain Current

TC=25℃

ID

20

A

TC=100℃

12.5

A

Pulsed Drain Current(1)

IDM

80

A

Single Pulse Avalanche Energy(4)

EAS

1500

mJ

Repetitive Avalanche Energy(4)

EAR

90

mJ

Repetitive Avalanche Current(4)

IAR

4.3

A

Peak Diode Recovery dv/dt(5)

dv/dt

5

V/ns

Power Dissipation

Ta=25℃

Ptot

2

W

TC=25℃

Ptot

230

W

Junction Temperature Range

Tj

-55～150

℃

Storage Temperature Range

Tstg

-55～150

℃

Maximum Temperature for soldering

TL

300

℃

4.2 Thermal Characteristics

Parameter

Symbol

Rating

Unit

Thermal Resistance,Junction to Case-sink

RthJC

0.54

℃

/W

Thermal Resistance,Junction to Ambient

RthJA

62.5

℃

/W

1 Description

These silicon N-channel enhanced vdmosfets, is obtained

by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and

enhance the avalanche energy. Which accords with the

RoHS standard.

2 Features

● Fast switching

● Low on resistance(Rdson≤0.3Ω)

● Low gate charge(Typ: 52nC)

● Low reverse transfer capacitances(Typ: 16pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system

miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.

VDSS = 500V

RDS(on)(TYP)= 0.24Ω

ID = 20A

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Title

N umber

R evisio n

Size

D

D ate:

10 -A pr-201 7

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File:

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TO-247

TO-3P

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