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ISCPL185D Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCPL185D
Bauteilbeschribung  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCPL185D Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
ISCPL185D
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -15A)
·
Advanced trench process technology
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Inverters
·
DC / DC converter
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
-30
A
PD
Total Dissipation @TC=25℃
120
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
1.25
℃
/W


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