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AOB298L Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AOB298L Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor AOB298L · DESCRIPTION · Drain Current ID= 58A@ TC=25℃ · Drain Source Voltage : VDSS= 100V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS . · Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 58 A ID(puls) Pulse Drain Current 130 A Ptot Total Dissipation@TC=25℃ 100 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Thermal Resistance, Junction to Case 1.5 ℃ /W |
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