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BSP250 Datenblatt(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Teilenummer BSP250
Bauteilbeschribung  P-Channel 35 V (D-S) MOSFET
PDF  8 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

BSP250 Datenblatt(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
0.001
0.1
10
100
TJ = 25 °C
TJ = 150 °C
V
SD - Source-to-Drain Voltage (V)
- 0.4
- 0.2
0
0.2
0.4
0.6
0.8
- 50
- 25
0
25
50
75
100
125
150
ID =1mA
ID = 250 μA
T
J - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.04
0.08
0.12
0.16
0.20
02
4
6
8
10
TJ =25 °C
TJ = 125 °C
ID =5A
V
GS - Gate-to-Source Voltage (V)
0
10
20
30
40
50
Time (s)
10
1000
0.1
0.01
0.001
100
1
Safe Operating Area
0.01
100
1
100
0.01
0.1
10 ms
0.1
1
10
10
TA = 25 °C
Single Pulse
1ms
DC
BVDSS Limited
1s
10 s
100 ms
Limited by RDS(on)*
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
BSP250
4



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