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UTM4052L-S08-R Datenblatt(PDF) 6 Page - VBsemi Electronics Co.,Ltd

Teilenummer UTM4052L-S08-R
Bauteilbeschribung  N- and P-Channel 60-V (D-S) MOSFET
PDF  14 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UTM4052L-S08-R Datenblatt(HTML) 6 Page - VBsemi Electronics Co.,Ltd

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
6
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Single Pulse Avalanche Capability
1
100
10
TA - Time In Avalanche (s)
0.001
0.0001
0.00001
0.000001
T
A =
L . I
D
BV - V
DD
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UTM4052L-S08-R
6



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