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FMS2020QFN Datenblatt(PDF) 1 Page - Filtronic Compound Semiconductors

Teilenummer FMS2020QFN
Bauteilbeschribung  GaAs Multi-Purpose Wide Band SPDT Switch
PDF  6 Pages
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Hersteller  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMS2020QFN Datenblatt(HTML) 1 Page - Filtronic Compound Semiconductors

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Preliminary Data Sheet
2.2
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email: sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2020QFN
GaAs Multi-Purpose Wide Band SPDT Switch
Features:
♦ 3x3x0.9mm Packaged pHEMT Switch
♦ Suitable for L, S, and C-band digital
cellular, cordless telephony and WLAN
applications
♦ High isolation, 25dB typ at 2.5GHz
♦ Low insertion loss, 0.5dB typ at 2.5GHz
♦ Low insertion loss, 1.0dB typ at 6GHz
♦ P0.1dB > 38dBm at 2GHz
Functional Schematic
Description and Applications:
The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna
switch. The die is fabricated using the Filtronic FL05 0.5
µm switch process technology, which offers leading
edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C
band wireless applications and WLAN access points where high linearity switching is required.
Electrical Specifications: (T
AMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω)
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
2.0 – 3.0 GHz
3.0 – 4.0 GHz
4.0 – 5.0 GHz
5.0 –6.0 GHz
0.4
0.45
0.55
0.65
0.75
0.95
dB
dB
dB
dB
dB
dB
Return Loss
0.5 – 2.5 GHz
2.5 – 5.0 GHz
23
18
dB
dB
Isolation
0.5 – 1.0 GHz
1.0 – 2.5 GHz
2.5 – 6.0 GHz
30
25
18
dB
dB
dB
Input power at 0.1dB compression point
1.0 GHz
2.0 GHz
2.5 GHz
6.0 GHz
>38
>38
>37
>33
dBm
dBm
dBm
dBm
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
<-70
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
<-70
dBc
Switching speed : T rise, T fall
T on, T off
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
<1.0
µs
µs
Control Current
+35dBm RF input @1GHz
<10
µA
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
All unused ports terminated in 50
Ω.
ANT
V1
RF1
V2
RF2


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