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FPD1000AS Datenblatt(PDF) 4 Page - Filtronic Compound Semiconductors |
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FPD1000AS Datenblatt(HTML) 4 Page - Filtronic Compound Semiconductors |
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4 / 8 page ![]() FPD1000AS 1W PACKAGED POWER PHEMT Phone: +1 408 850-5790 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Fax: +1 408 850-5766 Email: sales@filcsi.com • TYPICAL RF PERFORMANCE (VDS = 10V IDS = 200mA f = 1800 MHz): Power Transfer Characteristic 15.00 17.00 19.00 21.00 23.00 25.00 27.00 29.00 31.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 Input Power (dBm) -.50 .00 .50 1.00 1.50 2.00 2.50 3.00 3.50 Pout Comp Point Drain Efficiency and PAE .00% 10.00% 20.00% 30.00% 40.00% 50.00% 60.00% 70.00% 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 Input Power (dBm) .00% 10.00% 20.00% 30.00% 40.00% 50.00% 60.00% 70.00% PAE Eff. |
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