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ISCN200F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCN200F
Bauteilbeschribung  isc Silicon NPN Power Transistors
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN200F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
ISCN200F
DESCRIPTION
·
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC=2A
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO=80V (Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
PC
Collector Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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