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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCNH201W Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH201W Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH201W · FEATURES · Static drain-source on-resistance: RDS(on)≤41mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Fast Switching · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 95 A IDM Drain Current-Single Pulsed 285 A EAS Single pulsed Avalanche Energy 2300 mJ Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.2 ℃ /W |
Ähnliche Teilenummer - ISCNH201W |
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Ähnliche Beschreibung - ISCNH201W |
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