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IXTQ52P10P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer IXTQ52P10P
Bauteilbeschribung  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTQ52P10P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
IXTQ52P10P
·
FEATURES
·
Drain Source Voltage-
: VDSS= -100V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) ≤50mΩ@VGS= -10V
·
Fast Switching
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Easy to Mount
·
Space Savings
·
High Power Density
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
-52
A
IDM
Drain Current-Single Plused
-130
A
PD
Total Dissipation @TC=25℃
300
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.42
℃
/W


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