LP2128LT3G datasheet(2/5 Pages) LRC

2 / 5 page

LP2128LT1G

20V P-Channel Enhancement-Mode MOSFET

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μA)

Zero Gate Voltage Drain Current

(VGS = 0, VDS = -6.4 V)

Gate–Body Leakage Current

(VGS = ±12 V,VDS=0V)

Gate Threshold Voltage

(VDS = VGS, ID = -250μA)

Static Drain–Source On–State Resistance

(VGS = -4.5 V, ID = -2.4 A)

(VGS = -2.5 V, ID = -2 A)

(VGS = -1.8 V, ID = -1 A)

Forward Transconductance

(VDS = -5V, ID = -3.5A)

On-State Drain Current

(VDS≤

–5 V, VGS = –4.5 V)

Max. Diode Forward Current

Diode Forward Voltage

(IS = -1.6A, VGS = 0V)

Typ.

Max.

Unit

VBRDSS

-20

Symbol

Min.

μA

-1

IGSS

±100

Characteristic

Static

gfs

8.5

RDS(on)

mΩ

VGS(th)

-0.45

-0.9

IDSS

Source-Drain Diode

VSD

-1.6

Dynamic(Note 2)

-6

(VDS≤

–5 V, VGS = –2.5 V)

-3

ID(on)

-1.2

Leshan Radio Company, LTD.

Input Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -4 V)

Output Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -4 V)

Reverse Transfer Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -4 V)

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Gate Resistance

(VDS=0V,VGS=0V,f=1.0MHz)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

14.4

Crss

Switching(Note 2)

td(off)

td(on)

6.2

(VDD=-4V,RL=4Ω,RG=6.2

Ω,VGEN=-4.5V,ID=-1A)

(VDS=-10V,VGS=-

4.5V,ID=-2.4A)

Qgs

1.7

Qgd

2.5

9.3

Ciss

1038

Coss

110

Rev.B Jan. 2020

2/5

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