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ISCN207N Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCN207N
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN207N Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCN207N
DESCRIPTION
·
High Collector Current-IC= 1A
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO ≥ 200V
·
Low Collector Saturation Voltage-
: VCE(sat)≤ 2.0V @IC= 7A
·
Good Linearity of hFE
·
Complement to Type ISCP207N
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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