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ISCN208E Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer ISCN208E
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN208E Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website:www.iscsemi.com
isc & iscsemi is registered trademark
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isc Silicon NPN Power Transistor
ISCN208E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
200
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; RBE= ∞
200
V
V(BR)EBO
Emitter-Base Breakdown Vltage
IE= 1mA ; IC=0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 150mA ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
10
μ
A
hFE-1
DC Current Gain
IC= 150mA ; VCE= 5V
60
320
hFE-2
DC Current Gain
IC= 500mA ; VCE= 5V
30
hFE-1 Classifications
B
C
D
60-120
100-200
160-320
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.



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