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PJM138NSA Datenblatt(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Teilenummer PJM138NSA
Bauteilbeschribung  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Hersteller  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM138NSA Datenblatt(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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Revision：2.0 Jan-2019
Features
Low gate charge and RDS(ON)
Rugged and relaible
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers,
Display, memories, transistors, etc.
Battery operated systems
Solid-state relays
SOT-23
Absolute Maximum Ratings (TA=25℃unless otherwise specified)
Schematic diagram
1. Gate 2.Source 3.Drain
Marking: S3
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
0.22
A
Maximum Power Dissipation
PD
0.35
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Resistance,Junction-to-Ambient
RθJA
357
℃
/
W
Thermal Characteristics
PJM138NSA
N- Enhancement Mode Field Effect Transistor
3.Drain
2.Source
1.Gate


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