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BC868 Datenblatt(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Teilenummer BC868
Bauteilbeschribung  NPN Transistor
PDF  3 Pages
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Hersteller  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

BC868 Datenblatt(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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Revison：1.0 Feb-2019
Features
⚫
Low saturation voltage
⚫
Excellent current-to-gain characteristics
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
32
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Power Dissipation
PD
500
250
°C/W
Junction Temperature
TJ
150
TSTG
-55 to 150
°C
Unit
DC Current Gain
40
40
40
SOT-89
1. Base 2. Collector 3.Emitter
Marking: -10: 5J
-16:5K
-25:5L
Storage Temperature Range
Maximum Junction-to-Ambient
RθJA
°C
mW
BC868
NPN Transistor


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