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FMMT591 Datenblatt(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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FMMT591 Datenblatt(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 4 page ![]() FMMT591 PNP Transistor 1 / 4 Features Low equivalent on-resistance Be complementary with FMMT491 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Marking: 591 www.pingjingsemi.com Revision:1.0 Feb-2019 Peak Pulse Current -ICM 2 A |
Ähnliche Teilenummer - FMMT591 |
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Ähnliche Beschreibung - FMMT591 |
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