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HM9923PR Datenblatt(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM9923PR Datenblatt(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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3 / 6 page ![]() 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limit Unit Min Max VIN Input voltage -0.3 420 V VDD Low-voltage (control) part of IC supply voltage -0.3 10 V * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATION RANGE Symbol Parameter Limit Unit Min Max VIN Input voltage 20 400 V ELECTRICAL CHARACTERISTICS Symbol Parameter Test Condition Limit Ambient temperature, oC Unit Min Max VDDR Regulator output voltage VIN = (20- 400)V 5.5 9.0 25 10 V IDD Low-voltage (control) part of IC consumption current VDD = 9,5 V VIN = 40 V - 350 uA RON ON-resistance of the switch (DRAIN pin) VDD = VDDR IDRAIN = 20 mA - 210 Ohm VUVLO Undervoltage threshold (Low-voltage part of IC) VDD = VUVLO IDRAIN = 20 mA 4.0 VDDR – 0.3 V ISAT MOSFET saturation current (DRAIN pin) VDD= VDDR VSAT = 50 V 100 - mA VBR OFF-state breakdown voltage of the MOSFET switch (DRAIN pin) VDD = VDDR IDRAIN = 1 mA 500 - V ITH Threshold current HM9921 HM9922 HM9923 VDD = VDDR VIN = 50 V 20.5 52.0 30.8 25.5 63.0 38.2 25 10 -40 85 mA TOFF OFF time (DRAIN pin) VDD = VDDR VIN = 50 V 8.0 13.0 25 10 us TON Minimum ON-time of the switch (DRAIN pin) - 650 ns TBLANK Leading Edge Blanking Delay 200 400 ns / / Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com |
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