Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

WSF40P03 Datenblatt(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Teilenummer WSF40P03
Bauteilbeschribung  P-Ch MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF40P03 Datenblatt(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF40P03 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF40P03 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF40P03 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF40P03 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF40P03 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF40P03 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V , ID=-20A
---
15
18
mΩ
VGS=-4.5V , ID=-15A
---
20
26
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.6
-2.5
V
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3.5
---
Ω
Qg
Total Gate Charge
---
11
---
nC
Qgs
Gate-Source Charge
---
5
---
Qgd
Gate-Drain Charge
---
5
---
Td(on)
Turn-On Delay Time
---
11
20
ns
Tr
Rise Time
---
10
18
Td(off)
Turn-Off Delay Time
---
39
70
Tf
Fall Time
---
29
53
Cisse
Input Capacitance
---
1256
1633
pF
Cosse
Output Capacitance
---
187
---
Crsse
Reverse Transfer Capacitance
---
115
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-20
A
Diode Forward Voltage
VGS=0V , IS=-1A
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-20A , dI/dt=100A/µs
---
12
---
nS
Qrr
Reverse Recovery Charge
---
3.5
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WSF40P03
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
VDD=-15V, RL=15W,
IDS=-1A, VGEN=-10V,
RG=6W
VDS=-15V, VGS=-4.5V,
IDS=-20A
Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.
VSD d
d



Html Pages

1 2 3 4 5 6


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com