2CL3509

350mA 9.0kV

High Voltage Silicon Diodes for Micro-wave oven

-------------------------------------------------------------------------------------------------------------------------

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2020-08 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is made

of high quality silicon wafer chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

FEATURES:

1. High overload surge capability.

2. High Current,Low Forward Voltage.

3. Avalanche Characteristic.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage power supply rectifier.

2. High voltage rectifier circuit for microwave

oven.

3. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 2.50 grams (approx).

SHAPE DISPLAY:

Part Marking:

Code:

T3509

HVGT

Cathode Mark:

SIZE: (Unit:mm)

HVGT NAME: DO-722

MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

9.0

kV

Average Forward Current Maximum

Ta=60°C

350

mA

Non-Repetitive Forward Surge Current

60Hz Half-Sine Wave; 8.3mS; 1Cycle

30

A

Reverse surge current

100

mA

Junction Temperature

130

°C

Allowable Operation Case Temperature

Tc

-40~+130

°C

Storage Temperature

-40~+130

°C

ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless Otherwise Specified)

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

9.0

V

Maximum Reverse Current

5.0

uA

50

uA

Maximum Reverse Recovery Time

--

nS

Reverse Breakdown Voltage

9.5

kV