WSF4022 datasheet(2/8 Pages) WIINSOK

2 / 8 page

Symbol

Parameter

Min. Typ. Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

µA

IDSS

Zero Gate Voltage Drain Current

µA

IGSS

Gate Leakage Current

±100

VGS(th)

Gate Threshold Voltage

1.1

1.6

2.5

mΩ

Total Gate Charge

7.5

Qgs

Gate-Source Charge

3.24

Qgd

Gate-Drain Charge

2.75

Ciss

Input Capacitance

815

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td (on)

Turn-on Delay Time

7.8

Turn-on Rise Time

6.9

td(off)

Turn-off Delay Time

22.4

Turn-off Fall Time

4.8

VSD

Diode Forward Voltage

0.75

1.1

trr

Input Capacitance

Qrr

Output Capacitance

8.7

Diode

IDS=10A, dlSD/dt=100A/µs

ISD=1A, VGS=0V

VDS = 32V, VGS = 0V

VGS = ±20V, VDS = 0V

VGS = VDS, IDS = 250µA

VGS = 10V, ID = 10A

VGS = 4.5V, ID = 5A

VDS = 32V, VGS = 0V, TJ=85°C

VGS=0V, VDS=20V, f=1MHz

Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. 　

Note e：Guaranteed by design, not subject to production testing.

Gate Charge

Dynamic

VDS=20V,VGS=4.5V, ID=10A

VDD=20V, VGEN=10V,

IDS=1A,RG=6Ω,RL=20Ω.

RDS(on)

Drain-Source On-state Resistance

Electrical Characteristics

@TA=25℃ unless otherwise noted

Static

Conditions

VGS = 0V, ID = 250μA

WSF4022

Dual N-Ch MOSFET

Page 2

www.winsok.tw

Dec.2014

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