| Datenblatt-Suchmaschine für elektronische Bauteile |
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WST2005 Datenblatt(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST2005 Datenblatt(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 6 page ![]() consumption. Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Sou rce Voltage ± 12 V ID@Tc=25℃ Continuous Drain Current, VGS @ -4.5V 1 - 1.6 A IDM Pulsed Drain Current 2 - 5 A PD@TA=25℃ Total Power Dissipation 3 350 mW TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ BVDSS RDSON ID -20V 155mΩ -1.6A Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available Features Applications High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA A Switch and Battery Switch for Portable Devices Load Switch Absolute Maximum Ratings SOT -323 Pin Configuration Product Summery WST2005 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 General Description The H is P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB are electrically identical. -RoHS Compliant D D G G S 1 1 2 2 3 3 |
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