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WST8205 Datenblatt(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Teilenummer WST8205
Bauteilbeschribung  Dual N-Ch MOSFET
PDF  5 Pages
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Hersteller  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST8205 Datenblatt(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=
5.5A
---
2
4
28
m
Ω
VGS=2.5V , ID=3
.5A
---
30
45
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
0.7
1.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-2.33
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=5A
---
25
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
VDS=1
0V , VGS=4.5V , ID=5.5A
---
8.3
11.9
nC
Qgs
Gate-Source Charge
---
1.4
2.0
Qgd
Gate-Drain Charge
---
2.2
3.2
Td(on)
Turn-On Delay Time
VDD=10V , VGEN=4.5V , RG=6Ω
ID=5A
, RL=10Ω
---
5.7
11.6
ns
Tr
Rise Time
---
34
63
Td(off)
Turn-Off Delay Time
---
22
46
Tf
Fall Time
---
9.0
18.4
Ciss
Input Capacitance
VDS=1
0V , VGS=0V , f=1MHz
---
625
pF
Coss
Output Capacitance
---
69
Crss
Reverse Transfer Capacitance
---
61
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
1.5
A
ISM
Pulsed Source Current
2,4
---
---
16
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=5A , dI/dt=100A/µs , TJ=25℃
---
7.1
---
nS
Qrr
Reverse Recovery Charge
---
1.8
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST8205
Page 2
www.winsok.tw
Dec.2014
Dual N-Ch MOSFET
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---
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