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ISCN225N Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCN225N
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN225N Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCN225N
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·
Good Linearity of hFE
·
High Current Capability
·
Wide Area of Safe Operation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Recommend for 60W audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Pulse
15
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃


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