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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCNH228B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH228B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor ISCNH228B · FEATURES · Low drain-source on-resistance: RDS(ON) =15.5mΩ (MAX) · Enhancement mode: Vth = 2.5 to 4.5V (VDS = 10 V, ID=0.25mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous@TC=25℃ @TC=100℃ 90 63.6 A IDM Drain Current-Single Pulsed 360 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.5 ℃ /W |
Ähnliche Teilenummer - ISCNH228B |
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Ähnliche Beschreibung - ISCNH228B |
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