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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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P0420HDB Datenblatt(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P0420HDB Datenblatt(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  P0420HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3V DD = 50V , L = 1mH ,starting TJ = 25° C Junction-to-Ambient RqJA TC = 100 °C Power Dissipation Tj, Tstg Avalanche Energy 3 Operating Junction & Storage Temperature Range ID mJ 14 MAXIMUM W IDM °C / W TC = 25 °C 35 0.5 62.5 SYMBOL °C -55 to 150 Pulsed Drain Current 1,2 Avalanche Current 3 IAS EAS ID TC = 25 °C 200V Continuous Drain Current 2 TC = 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) 0.75Ω @V GS = 10V 4A Gate-Source Voltage Drain-Source Voltage LIMITS A VGS VDS V UNITS 16 SYMBOL 1 200 ±20 4 THERMAL RESISTANCE TYPICAL PD 2.7 Junction-to-Case RqJC 3.5 REV 1.0 1 2017/2/8 |
Ähnliche Teilenummer - P0420HDB |
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Ähnliche Beschreibung - P0420HDB |
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