| Datenblatt-Suchmaschine für elektronische Bauteile |
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STTH2003CT Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH2003CT Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Hight frequency secondary rectifier STTH2003CT FEATURES · Guarding for over voltage protection · Combines highest recovery and reverse voltage performance · Ultra-fast, soft and noise-free recovery · Low forward voltage,high efficiency · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current Per Leg Total device 10 20 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 110 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65-175 ℃ |
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