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STW33N60 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer STW33N60
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STW33N60 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

  STW33N60 Datasheet HTML 1Page - Inchange Semiconductor Company Limited STW33N60 Datasheet HTML 2Page - Inchange Semiconductor Company Limited STW33N60 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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isc N-Channel MOSFET Transistor
STW33N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
3.0
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=13A
0.125
Ω
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
±
100
nA
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VDS=600V; VGS= 0V;TJ=125℃
1
100
uA
VSDF
Diode forward voltage
IDR =26A, VGS = 0 V
1.6
V
Ciss
Input Capacitance
VGS = 0V,
VDS = 100V,
f = 1.0MHz
2524
pF
Coss
Output Capacitance
94.1
Crss
Reverse Transfer Capacitance
1.71
Qg
Total Gate Charge （4.5V）
VDS = 480V
ID = 30A
VGS = 10V
58.1
nC
Qgs
Gate-Source Charge
12.4
Qgd
Gate-Drain Charge
18.4
td(on)
Turn-on Delay Time
VDS = 400V
ID =30A
RG = 25Ω
57.8
nS
tr
Turn-on Rise Time
49.3
td(off)
Turn-off Delay Time
201.4
tf
Turn-off Fall Time
64.1



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