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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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P2003BVG Datenblatt(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P2003BVG Datenblatt(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% Rg tested 100% UIS tested SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. IAS MAXIMUM Junction-to-Ambient 50 SYMBOL ±25 IDM SYMBOL 9 LIMITS A VGS VDS 18.5 ID °C W UNITS 32 7 17 mJ 1.6 30 Drain-Source Voltage TA= 25 °C ID TA = 25 °C 30V Continuous Drain Current TA = 70 °C PARAMETERS/TEST CONDITIONS RDS(ON) 20mΩ @V GS = 10V 9A Gate-Source Voltage EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TA =70 °C Junction & Storage Temperature Range -55 to 150 Pulsed Drain Current 1 Avalanche Current PD RqJA Power Dissipation Tj, Tstg 2.5 V L =0.1mH REV 1.1 1 2015/11/11 |
Ähnliche Teilenummer - P2003BVG |
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Ähnliche Beschreibung - P2003BVG |
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