MBR3040ST – MBR30200ST

30.0A SCHOTTKY BARRIER DIODE

Features

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

1 of 2

MBR3040ST – MBR30200ST

Case: TO-247S, Molded Plastic

Mounting Position: Any

Polarity: See Diagram

Terminals: Plated Leads Solderable per

Classification Rating 94V-O

Plastic Case Material has UL Flammability

Guard Ring Die Construction

For Use in Low Voltage Application

Low Power Loss, High Efficiency

Ideally Suited for Automatic Assembly

Mechanical Data

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MIL-STD-202, Method 208

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Lead Free: For RoHS / Lead Free Version

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Schottky Barrier Chip

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Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

= 15A

V

°C/W

pF

0.70

V

28

31

35

42

70

105

140

V

40

45

50

60

100

150

200

V

30100

MBR

Characteristic

Symbol

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

30.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

200

A

Forward Voltage

FM

Peak Reverse Current

At Rated DC Blocking Voltage

0.1

20

mA

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

°C

3040

MBR

3045

MBR

3050

MBR

3060

30150

MBR

30200

Unit

0.80

0.85

0.92

350

280

200

1.4

2.0

ST

MBR

MBR

ST

ST

ST

ST

ST

ST

-55 to +175

-55 to +150

A

B

E

G

J

L

M

N

P

Q

K

S

M

H

R

D

C

Dim

Min

Max

A

1.20

1.50

B

4.60

5.16

C

19.75

20.25

D

14.10

14.80

E

1.60

2.20

G

0.40

0.80

H

15.40

16.00

J

K

3.50

Æ

4.30

Æ

L

3.30

4.30

M

5.20

5.70

N

1.10

1.40

P

1.90

2.40

Q

2.90

3.40

R

14.20

14.80

S

All Dimensions in mm

TO-247S

4.50

Æ

5.50

Æ

5.30

5.70