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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCNH229B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH229B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor ISCNH229B · FEATURES · Low drain-source on-resistance: RDS(ON) =5.2mΩ (MAX) · Enhancement mode: Vth = 2.5 to 3.8V (VDS = 10 V, ID=0.25mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 82 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pulsed 480 A PD Total Dissipation @TC=25℃ 220 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.64 ℃ /W |
Ähnliche Teilenummer - ISCNH229B |
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Ähnliche Beschreibung - ISCNH229B |
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