IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

IXTA 5N50P

IXTP 5N50P

IXTY 5N50P

Fig. 11. Capacitance

1

10

100

1000

10000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

2468

10

12

14

Fig. 7. Input Adm ittance

0

1

2

3

4

5

6

7

4

4.5

5

5.5

6

6.5

7

25

-40

Fig. 8. Transconductance

0

1

2

3

4

5

6

7

8

9

01

2345

67

T

25

125

Fig. 9. Source Curre nt vs.

Source -To-Drain Voltage

0

3

6

9

12

15

0.4

0.5

0.6

0.7

0.8

0.9

1

Fig. 12. Forw ard-Bias

Safe Operating Area

0.1

1

10

100

10

100

1000

100µs

1ms

DC

10ms

25µs