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SM5321 Datenblatt(PDF) 2 Page - Silicon Microstructures, Inc. |
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SM5321 Datenblatt(HTML) 2 Page - Silicon Microstructures, Inc. |
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2 / 11 page ![]() Silicon Microstructures, Inc. 2001-2017. All rights reserved +1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com 27 45 131 167 170 175 169 0 61 DOC # 40DS5960.05 SM5221, SM5321 & SM5421 Series www.si-micro.com Absolute Maximum Ratings All parameters are specified at Vdd = 3.3 V supply voltage at 25oC, unless otherwise noted. No. Characteristic Symbol Minimum Typical Maximum Units 1 Supply Voltage VDD 2.7 6.00 V 2 Supply Current IVDD 4.00 mA 3 Update Period 2 mS 4 Compensated Temperature -20 +85 °C 5 Operating Temperature(a) TOP -40 +105 °C 6 Storage Temperature(a) TSTG -40 - +125 °C 7 Media Compatibility(a,b) 8 Proof Pressure(a, c) PProof 12 psi 9 Burst Pressure(a, d) PBurst 15 psi Notes: a. Tested on a sample basis. b. Clean, dry gas compatible with wetted materials. Wetted materials include silicon, epoxy, RTV, gold and aluminum. c. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to the operating pressure range d. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device. Page 2 |
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