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3DA27C Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 3DA27C
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DA27C Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
3DA27C
DESCRIPTION
·
With TO-3
·
High DC Current Gain-
: hFE >10@IC= 1.5A
·
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 180V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation
50
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃


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