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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3518 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3518 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3518 DESCRIPTION · Low collector saturation voltage · High DC current gain · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 7 A PC Collector Power Dissipation @Ta=25℃ NOTE2 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted |
Ähnliche Teilenummer - 2SC3518 |
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Ähnliche Beschreibung - 2SC3518 |
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