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MPXV7002DP Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer MPXV7002DP
Bauteilbeschribung  MPXV7002 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
PDF  13 Pages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MPXV7002DP Datenblatt(HTML) 5 Page - NXP Semiconductors

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MPXV7002
Sensors
NXP B.V.
5
3
On-Chip Temperature Compensation, Calibration and Signal
Conditioning
The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature compensation,
calibration and signal conditioning circuitry onto a single monolithic chip.
Figure 2 illustrates the Differential or Gauge configuration in the basic chip carrier (Case 482). A gel die coat isolates the die
surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm.
The MPXV7002 series pressure sensor operating characteristics, and internal reliability and qualification tests are based on use
of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term
reliability. Contact the factory for information regarding media compatibility in your application.
Figure 3 shows the recommended decoupling circuit for interfacing the integrated sensor to the A/D input of a microprocessor or
microcontroller. Proper decoupling of the power supply is recommended.
Figure 4 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for
operation over a temperature range of 10
° to 60°C using the decoupling circuit shown in Figure 3. The output will saturate outside
of the specified pressure range.
Figure 2. Cross-Sectional Diagram SOP
(not to scale)
Figure 3. Recommended Power Supply Decoupling and Output Filtering
(For additional output filtering, please refer to Application Note AN1646.)
Fluoro Silicone
Gel Die Coat
Wire Bond
Die
P1
Stainless
Steel Cap
Thermoplastic
Case
Die Bond
Differential Sensing
Element
P2
Lead
Frame
+5 V
1.0
μF
0.01
μF
470 pF
GND
Vs
Vout
IPS
OUTPUT



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