AF4512CSL datasheet(2/8 Pages) ANACHIP

2 / 8 page

AF4512C

P & N-Channel 30-V (D-S) MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

2/8

Absolute Maximum Ratings (T

A=25ºC unless otherwise noted)

Symbol

Parameter

N-Channel P-Channel

Units

VDS

Drain-Source Voltage

-30

VGS

Gate-Source Voltage

-20

TA=25ºC

-5.2

Continuous Drain Current (Note 1)

TA=70ºC

5.6

-6.8

IDM

Pulsed Drain Current (Note 2)

-20

Continuous Source Current (Diode Conduction) (Note 1)

1.3

-1.3

TA=25ºC

2.1

Power Dissipation (Note 1)

TA=70ºC

1.3

TJ, TSTG

Operating Junction and Storage Temperature Range

-55 to 150

ºC

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJC

Maximum Junction-to-Case (Note 1)

t < 5 sec

ºC/W

RθJA

Maximum Junction-to-Ambient (Note 1)

t < 5 sec

ºC/W

Note 1: surface Mounted on 1”x 1” FR4 Board.

Note 2: Pulse width limited by maximum junction temperature

Specifications (T

A=25ºC unless otherwise noted)

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

VGS=0V, ID=250uA

V(BR)DSS Drain-Source breakdown Voltage

VGS=0V, ID=-250uA

-30

VDS= VGS, ID=250uA

1.95

VGS(th)

Gate-Threshold Voltage

VDS= VGS, ID=-250uA

-1.0

-1.7

-3

VGS=20V, VDS=0V

±100

IGSS

Gate-Body Leakage

VGS=-20V, VDS=0V

±100

VDS=24V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

-1

VDS=5V, VGS=10V

ID(on)

On-State Drain Current (Note 3)

VDS=-5V, VGS=-10V

-20

VGS=10V, ID=7A

VGS=4.5V, ID=6A

VGS=-10V, ID=-5A

rDS(on)

Drain-Source On-Resistance

(Note 3)

VGS=-4.5V, ID=-4A

mΩ

VDS=15V, ID=7A

gfs

Forward Tranconductance

(Note 3)

VDS=-15V, ID=-5A

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